Datasheet FP35R12W2T4 - Infineon IGBT, LOW POWER, 1200 V, 35 A, EASYPIM — Datenblatt

Detaillierte Beschreibung

Manufacturer: Infineon

Description: IGBT, LOW POWER, 1200 V, 35 A, EASYPIM

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Docket:
Technische Information / technical information
IGBT-Module IGBT-modules
FP35R12W2T4
EasyPIMTM Modul mit schnellem Trench/Feldstopp IGBT4 und Emitter Controlled 4 Diode und NTC EasyPIMTM module with fast Trench/Fieldstop IGBT4 and Emitter Controlled 4 diode and NTC
Vorlдufige Daten / preliminary data

Specifications:

• Collector Emitter Voltage V(br)ceo: 1.2 kV
• Collector Emitter Voltage Vces: 1.85 V
• DC Collector Current: 35 A
• Number of Pins: 23
• Operating Temperature Range: -40°C to +150°C
• Power Dissipation Max: 215 W
• Transistor Case Style: Module
• Transistor Polarity: N Channel

RoHS: Yes