Datasheet FP10R12W1T4_B11 - Infineon IGBT, LOW POW, 1200 V, 10 A, EASYPIM — Datenblatt

Detaillierte Beschreibung

Manufacturer: Infineon

Description: IGBT, LOW POW, 1200 V, 10 A, EASYPIM

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Docket:
Technische Information / technical information
IGBT-Module IGBT-modules
FP10R12W1T4_B11
Vorlдufige Daten / preliminary data
VS» I ТУС I Iзў PЪУЪ V·S» min.

TЭО = 25°C TЭО = 125°C TЭО = 150°C VS ЩИЪ V·SЪМ Q· R·НТЪ CНюЩ CШюЩ IS» I·S» TЭО = 25°C TЭО = 125°C TЭО = 150°C TЭО = 25°C TЭО = 125°C TЭО = 150°C TЭО = 25°C TЭО = 125°C TЭО = 150°C TЭО = 25°C TЭО = 125°C TЭО = 150°C TЭО = 25°C TЭО = 125°C TЭО = 150°C tБ УТ 0,045 0,045 0,045 0,044 0,061 0,063 0,18 0,245 0,275 0,165 0,215 0,225 0,90 1,35 1,55 0,55 0,80 0,87 35 1,25 1,15 5,2 1200 10 20 20 105 +/-20 typ. 1,85 2,15 2,25 5,8 0,09 0,0 0,60 0,024 1,0 400 max. 2,25 V A A A W V TЭО = 25°C T = 100°C, TЭО = 175°C T = 25°C, TЭО = 175°C t« = 1 ms T = 25°C, TЭО = 175°C

Specifications:

• Collector Emitter Voltage V(br)ceo: 1.2 kV
• Collector Emitter Voltage Vces: 1.85 V
• DC Collector Current: 10 A
• Number of Pins: 23
• Operating Temperature Range: -40°C to +150°C
• Power Dissipation Max: 105 W
• Transistor Case Style: Module
• Transistor Polarity: N Channel

RoHS: Yes