Datasheet DF650R17IE4 - Infineon IGBT, HI PO, CHOP NTC, 1700 V, 650 A, PRIMEP — Datenblatt
Part Number: DF650R17IE4
Detaillierte Beschreibung
Manufacturer: Infineon
Description: IGBT, HI PO, CHOP NTC, 1700 V, 650 A, PRIMEP
Docket:
Technische Information / technical information
IGBT-Module IGBT-modules
DF650R17IE4
PrimePACKTM2 Modul und NTC PrimePACKTM2 module and NTC
! " # $ %
Specifications:
- Collector Emitter Voltage V(br)ceo: 1.7kV
- Collector Emitter Voltage Vces: 2 V
- DC Collector Current: 650 A
- Module Configuration: Single
- Number of Pins: 10
- Operating Temperature Range: -40°C to +150°C
- Power Dissipation Max: 4.15 kW
- Transistor Case Style: Module
- Transistor Polarity: N Channel
RoHS: Yes