Datasheet 2MBI150U4B-120-50 - Fuji Electric IGBT, DUAL, MODULE, 150 A, 1200 V — Datenblatt

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Manufacturer: Fuji Electric

Description: IGBT, DUAL, MODULE, 150 A, 1200 V

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Docket:
SPECIFICATION
Device Name Type Name Spec.

No.
: : :
IGBT MODULE
(RoHS compliant product)

Specifications:

• Collector Emitter Voltage V(br)ceo: 1.2 kV
• Collector Emitter Voltage Vces: 2.2 V
• Current Ic @ Vce Sat: 150 A
• Current Ic Continuous a Max: 200 A
• Current Temperature: 25°C
• DC Collector Current: 200 A
• External Depth: 45 mm
• External Length / Height: 30 mm
• External Width: 92 mm
• Fall Time tf: 410 ns
• Full Power Rating Temperature: 25°C
• Isolation Voltage: 2.5 kV
• Junction Temperature Tj Max: 150°C
• Module Configuration: Dual
• Mounting Type: Screw
• Number of Pins: 7
• Number of Transistors: 2
• Package / Case: M233
• Power Dissipation Max: 780 W
• Power Dissipation: 780 W
• Pulsed Current Icm: 400 A
• Rise Time: 320 ns
• Transistor Case Style: Module
• Transistor Polarity: N Channel
• Voltage Vces: 1.2 kV

RoHS: Yes

Andere Namen:

2MBI150U4B12050, 2MBI150U4B 120 50