Datasheet 2MBI100S-120 - Fuji Electric IGBT MODULE, 1200 V, 100 A — Datenblatt

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Manufacturer: Fuji Electric

Description: IGBT MODULE, 1200 V, 100 A

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Docket:
Fuji Semiconductor, Inc.

- P.O. Box 702708 - Dallas, TX - (972) 733-1700 - www.fujisemiconductor.com


Specifications:

• Collector Emitter Voltage V(br)ceo: 1.2kV
• Collector Emitter Voltage Vces: 2.6 V
• Current Ic @ Vce Sat: 75 A
• Current Ic Continuous a Max: 100 A
• Current Temperature: 25°C
• DC Collector Current: 100 A
• External Depth: 62 mm
• External Length / Height: 30 mm
• External Width: 108 mm
• Fall Time tf: 300 ns
• Full Power Rating Temperature: 25°C
• Isolation Voltage: 2.5kV
• Junction Temperature Tj Max: 150°C
• Module Configuration: Dual
• Mounting Type: Screw
• Number of Pins: 7
• Number of Transistors: 2
• Package / Case: M234
• Power Dissipation Max: 690 W
• Power Dissipation Pd: 780 W
• Power Dissipation: 780 W
• Pulsed Current Icm: 300 A
• Rise Time: 600 ns
• Transistor Case Style: Module
• Transistor Polarity: N Channel
• Transistor Type:
• Voltage Vces: 1.2kV
• Weight: 0.4kg

RoHS: Yes

Andere Namen:

2MBI100S120, 2MBI100S 120