Datasheet VS-GB70NA60UF - Vishay TRANSISTOR, IGBT, 600 V, 70 A, SOT227 — Datenblatt

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Manufacturer: Vishay

Description: TRANSISTOR, IGBT, 600 V, 70 A, SOT227

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Docket:
GB70NA60UF
Vishay Semiconductors
"High Side Chopper" IGBT SOT-227 (Warp 2 Speed IGBT), 70 A
FEATURES
· NPT warp 2 speed IGBT technology with positive temperature coefficient · Square RBSOA · Low VCE(on) · FRED Pt® hyperfast rectifier · Fully isolated package

Specifications:

• Collector Emitter Voltage V(br)ceo: 600 V
• Collector Emitter Voltage Vces: 2.23 V
• DC Collector Current: 111 A
• Number of Pins: 4
• Operating Temperature Range: -40В°C to +150В°C
• Power Dissipation Max: 447 W
• Transistor Case Style: SOT-227
• Transistor Type: IGBT

RoHS: Yes

Accessories:

• Electrolube - HTS35SL
• Powerex - M57962L

Andere Namen:

VSGB70NA60UF, VS GB70NA60UF