Datasheet VS-GT100DA120U - Vishay IGBT, CHOPPER, 1200 V, 100 A, SOT227 — Datenblatt

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Manufacturer: Vishay

Description: IGBT, CHOPPER, 1200 V, 100 A, SOT227

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Docket:
GT100DA120U
Vishay Semiconductors
Insulated Gate Bipolar Transistor (Trench IGBT), 100 A
FEATURES
· Trench IGBT technology temperature coefficient · Square RBSOA · 10 s short circuit capability · HEXFRED® antiparallel diodes with ultrasoft reverse recovery

Specifications:

• Collector Emitter Voltage V(br)ceo: 1.2kV
• Collector Emitter Voltage Vces: 1.73 V
• DC Collector Current: 258 A
• Number of Pins: 4
• Operating Temperature Range: -40В°C to +150В°C
• Power Dissipation Max: 893 W
• Transistor Case Style: SOT-227
• Transistor Type: IGBT

RoHS: Yes

Accessories:

• Electrolube - HTS35SL

Andere Namen:

VSGT100DA120U, VS GT100DA120U