Datasheet VS-GT100DA60U - Vishay TRANSISTOR, IGBT, 600 V, 100 A, SOT227 — Datenblatt

Detaillierte Beschreibung

Manufacturer: Vishay

Description: TRANSISTOR, IGBT, 600 V, 100 A, SOT227

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Docket:
GT100DA60U
Vishay Semiconductors
Insulated Gate Bipolar Transistor (Trench IGBT), 100 A
FEATURES
· Trench IGBT technology temperature coefficient · Square RBSOA · 3 s short circuit capability · FRED Pt® antiparallel diodes with ultrasoft reverse recovery

Specifications:

• Collector Emitter Voltage V(br)ceo: 600 V
• Collector Emitter Voltage Vces: 1.72 V
• DC Collector Current: 184 A
• Number of Pins: 4
• Operating Temperature Range: -40В°C to +175В°C
• Power Dissipation Max: 577 W
• Transistor Case Style: SOT-227
• Transistor Type: IGBT

RoHS: Yes

Accessories:

• Electrolube - HTS35SL
• Powerex - M57962L

Andere Namen:

VSGT100DA60U, VS GT100DA60U