Datasheet VS-GT100NA120UX - Vishay TRANSISTOR, IGBT, 1200 V, 50 A, SOT227 — Datenblatt

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Manufacturer: Vishay

Description: TRANSISTOR, IGBT, 1200 V, 50 A, SOT227

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Docket:
GT100NA120UX
Vishay Semiconductors
"High Side Chopper" IGBT SOT-227 (Trench IGBT), 100 A
FEATURES
· Trench IGBT technology · Very low VCE(on) · Square RBSOA · HEXFRED® clamping diode · 10 s short circuit capability

Specifications:

• Collector Emitter Voltage V(br)ceo: 1.2kV
• Collector Emitter Voltage Vces: 2.36 V
• DC Collector Current: 134 A
• Number of Pins: 4
• Operating Temperature Range: -40В°C to +150В°C
• Power Dissipation Max: 463 W
• Transistor Case Style: SOT-227
• Transistor Type: IGBT

RoHS: Yes

Accessories:

• Electrolube - HTS35SL

Andere Namen:

VSGT100NA120UX, VS GT100NA120UX