Datasheet STGP10NB60SD - STMicroelectronics IGBT, TO-220 — Datenblatt

Detaillierte Beschreibung

Manufacturer: STMicroelectronics

Description: IGBT, TO-220

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Docket:
STGP10NB60SD
N-CHANNEL 10A - 600V - TO-220 Low Drop PowerMESHTM IGBT
General features
Type STGP10NB60SD
VCES 600V

Simulation Model

Specifications:

• Collector Emitter Voltage V(br)ceo: 600 V
• Collector Emitter Voltage Vces: 1.7 V
• Current Ic Continuous a Max: 20 A
• Current Temperature: 25°C
• DC Collector Current: 20 A
• Fall Time tf: 1200 ns
• Full Power Rating Temperature: 25°C
• Operating Temperature Range: -65°C to +150°C
• Package / Case: TO-220
• Power Dissipation Max: 31.5 W
• Power Dissipation Pd: 80 W
• Power Dissipation: 31.5 W
• Rise Time: 0.46 ns
• Termination Type: Through Hole
• Transistor Case Style: TO-220
• Transistor Polarity: N Channel
• Transistor Type:
• Voltage Vces: 600 V

RoHS: Yes