Datasheet IHW25N120R2 - Infineon IGBT+ DIODE,1200V,25A,TO247 — Datenblatt

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Manufacturer: Infineon

Description: IGBT+ DIODE,1200V,25A,TO247

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Docket:
IHW25N120R2
Soft Switching Series
Reverse Conducting IGBT with monolithic body diode
Features: · Powerful monolithic Body Diode with very low forward voltage · Body diode clamps negative voltages · Trench and Fieldstop technology for 1200 V applications offers : - very tight parameter distribution - high ruggedness, temperature stable behavior · NPT technology offers easy parallel switching capability due to positive temperature coefficient in VCE(sat) · Low EMI · Qualified according to JEDEC1 for target applications · Pb-free lead plating; RoHS compliant · Complete product spectrum and PSpice Models : http://www.infineon.com/igbt/ Applications: · Inductive Cooking · Soft Switching Applications Type IHW25N120R2 Maximum Ratings Parameter Collector-emitter voltage DC collector current TC = 25°C TC = 100°C Pulsed collector current, tp limited by Tjmax Turn off safe operating area (VCE 1200V, Tj 175°C) Diode forward current TC = 25°C TC = 100°C Diode pulsed current, tp limited by Tjmax

Specifications:

• Transistor Type: IGBT
• DC Collector Current: 25 A
• Collector Emitter Voltage Vces: 1.8 V
• Power Dissipation Max: 365 W
• Collector Emitter Voltage V(br)ceo: 1.2kV
• Operating Temperature Range: -40°C to +175°C
• Transistor Case Style: TO-247
• Number of Pins: 3

RoHS: Yes

Accessories:

• Fischer Elektronik - THFU 2