Datasheet IGA03N120H2 - Infineon IGBT,1200V,3A,TO220 — Datenblatt

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Manufacturer: Infineon

Description: IGBT,1200V,3A,TO220

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Docket:
IGA03N120H2
HighSpeed 2-Technology
C
· ·
Designed for: - TV ­ Horizontal Line Deflection 2 generation HighSpeed-Technology for 1200V applications offers: - loss reduction in resonant circuits - temperature stable behavior - parallel switching capability - tight parameter distribution - Eoff optimized for IC =3A - simple Gate-Control

Specifications:

• Transistor Type: IGBT
• DC Collector Current: 3 A
• Collector Emitter Voltage Vces: 2.8 V
• Power Dissipation Max: 29 W
• Collector Emitter Voltage V(br)ceo: 1.2kV
• Operating Temperature Range: -40°C to +150°C
• Transistor Case Style: TO-220
• Number of Pins: 3

RoHS: Yes

Accessories:

• AAVID THERMALLOY - MAX01G