Datasheet GT10Q101 - Toshiba IGBT, 1200 V, TO-3P(N) — Datenblatt

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Manufacturer: Toshiba

Description: IGBT, 1200 V, TO-3P(N)

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Docket:
GT10Q101
TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT
GT10Q101
High Power Switching Applications
Unit: mm The 3rd Generation Enhancement-Mode High Speed: tf = 0.32 µs (max) Low Saturation Voltage: VCE (sat) = 2.7 V (max)

Specifications:

• Transistor Type: IGBT
• DC Collector Current: 10 A
• Collector Emitter Voltage Vces: 2.7 V
• Power Dissipation Max: 140 W
• Collector Emitter Voltage V(br)ceo: 1200 V
• Transistor Case Style: TO-3P (N)
• Number of Pins: 3
• Current Ic Continuous a Max: 10 A
• Package / Case: TO-3P (N)
• Pin Format: GCE
• Power Dissipation: 140 W
• Power Dissipation Pd: 140 W
• Pulsed Current Icm: 20 A
• Rise Time: 70 ns
• Termination Type: Through Hole
• Transistor Polarity: N Channel
• Voltage Vces: 1200 V

RoHS: Yes

Accessories:

• Fischer Elektronik - TF 3 2
• Fischer Elektronik - WLK 5