Datasheet IKP10N60T - Infineon IGBT, N, 600 V, 10 A, TO-220 — Datenblatt
Part Number: IKP10N60T
Detaillierte Beschreibung
Manufacturer: Infineon
Description: IGBT, N, 600 V, 10 A, TO-220
Docket:
TrenchStop® Series
IKP10N60T p
Low Loss DuoPack : IGBT in TrenchStop® and Fieldstop technology with soft, fast recovery anti-parallel EmCon HE diode
C
· · · ·
Specifications:
- Transistor Type: IGBT
- DC Collector Current: 20 A
- Collector Emitter Voltage Vces: 2.05 V
- Power Dissipation Max: 110 W
- Collector Emitter Voltage V(br)ceo: 600 V
- Operating Temperature Range: -40°C to +175°C
- Transistor Case Style: TO-220
- Current Ic Continuous a Max: 10 A
- Number of Transistors: 1
- Package / Case: TO-220
- Power Dissipation: 110 W
- Termination Type: Through Hole
- Transistor Polarity: N Channel
- Voltage Vces: 600 V
RoHS: Yes
Accessories:
- Fischer Elektronik - WLK 5