Datasheet IKP01N120H2 - Infineon IGBT, N, 1200 V, 1.3 A, TO-220 — Datenblatt

Infineon IKP01N120H2

Part Number: IKP01N120H2

Detaillierte Beschreibung

Manufacturer: Infineon

Description: IGBT, N, 1200 V, 1.3 A, TO-220

Docket:
IKP01N120H2
HighSpeed 2-Technology with soft, fast recovery anti-parallel EmCon HE diode
C
·
Designed for: - SMPS - Lamp Ballast - ZVS-Converter - optimised for soft-switching / resonant topologies 2 generation HighSpeed-Technology for 1200V applications offers: - loss reduction in resonant circuits - temperature stable behavior - parallel switching capability - tight parameter distribution - Eoff optimized for IC =1A Pb-free lead plating; RoHS compliant 2 Qualified according to JEDEC for target applications Complete product spectrum and PSpice Models : http://www.infineon.com/igbt/ VCE 1200V IC 1A Eoff 0.09mJ Tj 150°C Marking K01H1202 Package PG-TO-220-3-1

Specifications:

Transistor Type: IGBT
DC Collector Current: 3.2 A
Collector Emitter Voltage Vces: 2.8 V
Power Dissipation Max: 28 W
Collector Emitter Voltage V(br)ceo: 1200 V
Operating Temperature Range: -40°C to +150°C
Transistor Case Style: TO-220
Current Ic Continuous a Max: 1.3 A
Number of Transistors: 1
Package / Case: TO-220
Power Dissipation: 28 W
Termination Type: Through Hole
Transistor Polarity: N Channel
Voltage Vces: 1200 V

RoHS: Yes

Accessories:

Fischer Elektronik - WLK 5