Datasheet IGW03N120H2 - Infineon IGBT, N, 1200 V, 3.9 A, TO-247 — Datenblatt
Part Number: IGW03N120H2
Detaillierte Beschreibung
Manufacturer: Infineon
Description: IGBT, N, 1200 V, 3.9 A, TO-247
Docket:
IGP03N120H2 IGW03N120H2
HighSpeed 2-Technology
C
·
Designed for: - SMPS - Lamp Ballast - ZVS-Converter - optimised for soft-switching / resonant topologies 2nd generation HighSpeed-Technology for 1200V applications offers: - loss reduction in resonant circuits - temperature stable behavior - parallel switching capability - tight parameter distribution - Eoff optimized for IC =3A
Specifications:
- Transistor Type: IGBT
- DC Collector Current: 9.6 A
- Collector Emitter Voltage Vces: 2.8 V
- Power Dissipation Max: 62.5 W
- Collector Emitter Voltage V(br)ceo: 1200 V
- Operating Temperature Range: -40°C to +150°C
- Transistor Case Style: TO-247
- Current Ic Continuous a Max: 3.9 A
- Number of Transistors: 1
- Package / Case: TO-247
- Power Dissipation: 62.5 W
- Termination Type: Through Hole
- Transistor Polarity: N Channel
- Voltage Vces: 1200 V
RoHS: Yes
Accessories:
- Fischer Elektronik - WLK 5
- Fischer Elektronik - WLPG 02