Datasheet IRG4IBC20FDPBF - International Rectifier IGBT, N — Datenblatt

Detaillierte Beschreibung

Manufacturer: International Rectifier

Description: IGBT, N

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Docket:
PD -91750A
IRG4IBC20FD
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE
Features
· · · · Very Low 1.66V votage drop 2.5kV, 60s insulation voltage U 4.8 mm creapage distance to heatsink Fast: Optimized for medium operating frequencies ( 1-5 kHz in hard switching, >20 kHz in resonant mode).

· IGBT co-packaged with HEXFREDTM ultrafast, ultrasoft recovery antiparallel diodes · Tighter parameter distribution · Industry standard Isolated TO-220 FullpakTM outline

Specifications:

• Transistor Type: IGBT
• DC Collector Current: 14.3 A
• Power Dissipation Max: 34 W
• Collector Emitter Voltage V(br)ceo: 600 V
• Transistor Case Style: TO-220FP
• Number of Pins: 3
• Current Ic Continuous a Max: 14.3 A
• Package / Case: TO-220FP
• Power Dissipation: 34 W
• Termination Type: Through Hole
• Transistor Polarity: N Channel
• Voltage Vces: 600 V

RoHS: Yes

Accessories:

• Fischer Elektronik - WLK 5