Datasheet IXGA30N120B3 - IXYS IGBT,1200V,30A,TO-263 — Datenblatt

Detaillierte Beschreibung

Manufacturer: IXYS

Description: IGBT,1200V,30A,TO-263

Download Data Sheet

Docket:
GenX3TM 1200V IGBTs
High-Speed Low-Vsat PT IGBTs 3-20 kHz Switching
IXGA30N120B3 IXGP30N120B3 IXGH30N120B3
VCES IC110 VCE(sat) tfi(typ)
TO-263 (IXGA)

Specifications:

• Transistor Type: IGBT
• DC Collector Current: 60 A
• Collector Emitter Voltage Vces: 3.5 V
• Power Dissipation Max: 300 W
• Collector Emitter Voltage V(br)ceo: 1.2kV
• Operating Temperature Range: -55°C to +150°C
• Transistor Case Style: TO-263
• Number of Pins: 3

RoHS: Yes