Datasheet STGE50NC60VD - STMicroelectronics IGBT, N 600 V 50 A ISOTOP — Datenblatt

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Manufacturer: STMicroelectronics

Description: IGBT, N 600 V 50 A ISOTOP

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Docket:
STGE50NC60VD
50 A - 600 V very fast IGBT
Features
High current capability High frequency operation Low CRES/CIES ratio (no cross-conduction susceptibility) Very soft ultra fast recovery antiparallel diode
Applications

Specifications:

• Transistor Type: IGBT Module
• DC Collector Current: 90 A
• Collector Emitter Voltage Vces: 2.5 V
• Power Dissipation Max: 260 W
• Collector Emitter Voltage V(br)ceo: 600 V
• Operating Temperature Range: -55°C to +150°C
• Transistor Case Style: ISOTOP
• Current Ic Continuous a Max: 50 A
• Package / Case: ISOTOP
• Power Dissipation: 260 W
• Power Dissipation Pd: 260 W
• Pulsed Current Icm: 200 A
• Rise Time: 17 ns
• Termination Type: SMD
• Transistor Polarity: N Channel
• Voltage Vces: 600 V

RoHS: Yes

Accessories:

• Nettlefolds - MB04040010007FA
• SCHRODER - 13459