Datasheet IXGR35N120B - IXYS IGBT, ISOPLUS247 — Datenblatt
Part Number: IXGR35N120B
Detaillierte Beschreibung
Manufacturer: IXYS
Description: IGBT, ISOPLUS247
Docket:
HiPerFASTTM IGBT ISOPLUS247TM
VCES
IC25
VCE(sat)
tfi(typ) 160 ns 115 ns
Specifications:
- Transistor Type: IGBT
- DC Collector Current: 70 A
- Collector Emitter Voltage Vces: 3.3 V
- Power Dissipation Max: 200 W
- Collector Emitter Voltage V(br)ceo: 1.2kV
- Operating Temperature Range: -55°C to +150°C
- Transistor Case Style: ISOPLUS-247
- Current Ic Continuous a Max: 70 A
- Fall Time tf: 160 ns
- Junction to Case Thermal Resistance A: 0.5°C/W
- Package / Case: ISOPLUS-247
- Pin Configuration: Single
- Power Dissipation: 200 W
- Rise Time: 160 ns
- Termination Type: Through Hole
- Transistor Polarity: NPN
- Voltage Vces: 1200 V
RoHS: Yes