Datasheet STGW35NB60SD - STMicroelectronics IGBT, TO-247 — Datenblatt
Part Number: STGW35NB60SD
Detaillierte Beschreibung
Manufacturer: STMicroelectronics
Description: IGBT, TO-247
Docket:
STGW35NB60SD
N-CHANNEL 35A - 600V - TO-247 Low Drop PowerMESHTM IGBT
General features
Type STGW35NB60SD
VCES 600V
Specifications:
- Transistor Type: IGBT
- DC Collector Current: 70 A
- Collector Emitter Voltage Vces: 1.7 V
- Power Dissipation Max: 200 W
- Collector Emitter Voltage V(br)ceo: 600 V
- Operating Temperature Range: -55°C to +150°C
- Transistor Case Style: TO-247
- Current Ic Continuous a Max: 70 A
- Package / Case: TO-247
- Power Dissipation: 200 W
- Power Dissipation Pd: 200 W
- Pulsed Current Icm: 250 A
- Rise Time: 70 ns
- Termination Type: Through Hole
- Transistor Polarity: N Channel
- Voltage Vces: 600 V
RoHS: Yes
Accessories:
- Fischer Elektronik - WLK 5
- Fischer Elektronik - WLPG 02