Datasheet IRG7PH35UD1-EP - International Rectifier INSULATED GATE BIPOLAR TRANSISTOR — Datenblatt

Detaillierte Beschreibung

Manufacturer: International Rectifier

Description: INSULATED GATE BIPOLAR TRANSISTOR

Specifications:

• Transistor Type: IGBT
• DC Collector Current: 50 A
• Collector Emitter Voltage, Vces: 1200 V
• Power Dissipation, Pd: 179 mW
• Operating Temperature Range: -55°C to +150°C
• Number of Pins: 3

RoHS: Yes

Andere Namen:

IRG7PH35UD1EP, IRG7PH35UD1 EP