Datasheet GA200SA60UP - Vishay SINGLE IGBT, 600 V, 200 A — Datenblatt

Detaillierte Beschreibung

Manufacturer: Vishay

Description: SINGLE IGBT, 600 V, 200 A

Download Data Sheet

Docket:
GA200SA60UP
Vishay Semiconductors
Insulated Gate Bipolar Transistor (Ultrafast Speed IGBT), 100 A
FEATURES
· Ultrafast: Optimized for minimum saturation voltage and speed up to 40 kHz in hard switching, > 200 kHz in resonant mode · Very low conduction and switching losses · Fully isolate package (2500 VAC/RMS) · Very low internal inductance ( 5 nH typical) · Industry standard outline · UL approved file E78996 · Compliant to RoHS directive 2002/95/EC · Designed and qualified for industrial level

Specifications:

• Transistor Type: IGBT
• DC Collector Current: 200 A
• Collector Emitter Voltage Vces: 600 V
• Power Dissipation Pd: 500 W
• Collector Emitter Voltage V(br)ceo: 600 V
• Operating Temperature Range: -55°C to +150°C

RoHS: Yes