Datasheet NGP15N41CLG - ON Semiconductor IGBT, IGNITION, 410 V, 15 A, TO-220AB — Datenblatt

Detaillierte Beschreibung

Manufacturer: ON Semiconductor

Description: IGBT, IGNITION, 410 V, 15 A, TO-220AB

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Docket:
NGD15N41CL, NGD15N41ACL, NGB15N41CL, NGB15N41ACL, NGP15N41CL, NGP15N41ACL Ignition IGBT 15 A, 410 V
http://onsemi.com
N-Channel DPAK, D2PAK and TO-220
This Logic Level Insulated Gate Bipolar Transistor (IGBT) features monolithic circuitry integrating ESD and Over-Voltage clamped protection for use in inductive coil drivers applications.

Primary uses include Ignition, Direct Fuel Injection, or wherever high voltage and high current switching is required.
Features

Specifications:

• Collector Emitter Voltage V(br)ceo: 440 V
• Collector Emitter Voltage Vces: 440 V
• DC Collector Current: 15 A
• Number of Pins: 3
• Operating Temperature Range: -55°C to +175°C
• Power Dissipation: 107 W
• Transistor Case Style: TO-220
• Transistor Type: IGBT
• RoHS: Yes
• SVHC: No SVHC (19-Dec-2011)