Datasheet Ampleon BLF989Е — Datenblatt

BLF989E; BLF989ES
UHF power LDMOS transistor
Rev. 1 — 3 April 2020 Product data sheet 1. Product profile
1.1 General description
A 1000 W LDMOS RF power transistor for asymmetrical broadcast Doherty transmitter
applications which operates at 180 W DVB-T average power. The excellent ruggedness of
this device makes it ideal for digital and analog transmitter applications.
Table 1.
Application information
RF performance at VDS = 50 V in an asymmetrical Doherty application.
Test signal
DVB-T (8k OFDM) [1] [1] f PL(AV) Gp D IMDshldr (MHz) (W) (dB) (%) (dBc) (dB) 470 to 620 180 17 50 38 8 470 to 700 180 15 48 37.5 7.5 PAR (of output signal) at 0.01 % probability on CCDF; PAR of input signal = 9.5 dB at 0.01 % probability on
CCDF. 1.2 Features and benefits PAR Designed for asymmetric Doherty operation
Very high efficiency enabling air cooled high power transmitters
Integrated ESD protection
Excellent ruggedness
High power gain
Excellent reliability
Easy power control
For RoHS compliance see the product details on the Ampleon website 1.3 Applications Broadcast transmitter applications in the UHF band Digital broadcasting BLF989E; BLF989ES
UHF power LDMOS transistor 2. Pinning information
Table 2. Pinning Pin Description Simplified outline Graphic symbol BLF989E (SOT539A)
1 drain1 (peak) 2 drain2 (main) 3 gate1 (peak) 4 gate2 (main) 5 1 1 2 …