Datasheet IRG4BC20FD-SPBF - International Rectifier IGBT, D2-PAK — Datenblatt
Part Number: IRG4BC20FD-SPBF
Detaillierte Beschreibung
Manufacturer: International Rectifier
Description: IGBT, D2-PAK
Docket:
PD -95965
IRG4BC20FD-SPbF
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE
Features
· Fast: Optimized for medium operating frequencies ( 1-5 kHz in hard switching, >20 kHz in resonant mode).
· Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than Generation 3 · IGBT co-packaged with HEXFREDTM ultrafast, ultra-soft-recovery anti-parallel diodes for use in bridge configurations · Industry standard D2Pak package · Lead-Free · Generation 4 IGBTs offer highest efficiencies available · IGBTs optimized for specific application conditions · HEXFRED diodes optimized for performance with IGBTs . Minimized recovery characteristics require less/no snubbing · Designed to be a "drop-in" replacement for equivalent industry-standard Generation 3 IR IGBTs
Specifications:
- Transistor Type: IGBT
- Max Voltage Vce Sat: 1.66 V
- Collector-to-Emitter Breakdown Voltage: 600 V
- Transistor Case Style: TO-263 (D2-PAK)
- Case Style: TO-263 (D2-PAK)
- Current Temperature: 25°C
- Full Power Rating Temperature: 25°C
- Max Current Ic Continuous a: 16 A
- Max Fall Time: 290 ns
- Power Dissipation: 60 W
- Power Dissipation Pd: 60 W
- Pulsed Current Icm: 64 A
- Rise Time: 22 ns
- SMD Marking: IRG4BC20FDS
- Termination Type: SMD
- Transistor Polarity: N
RoHS: Yes
Accessories:
- Fischer Elektronik - WLK 5
- Fischer Elektronik - WLPG 02
Andere Namen:
IRG4BC20FDSPBF, IRG4BC20FD SPBF