Datasheet GA200SA60UPBF - International Rectifier IGBT, SOT-227 TUBE 10 — Datenblatt

Detaillierte Beschreibung

Manufacturer: International Rectifier

Description: IGBT, SOT-227 TUBE 10

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Docket:
PD -50066A
GA200SA60U
INSULATED GATE BIPOLAR TRANSISTOR
Features
· UltraFast: Optimized for minimum saturation voltage and operating frequencies up to 40 kHz in hard switching, > 200 kHz in resonant mode · Very low conduction and switching losses · Fully isolate package ( 2,500 Volt AC/RMS) · Very low internal inductance ( 5 nH typ.) · Industry standard outline

Specifications:

• Transistor Type: IGBT
• Max Voltage Vce Sat: 1.6 V
• Collector-to-Emitter Breakdown Voltage: 600 V
• Transistor Case Style: ISOTOP
• Case Style: ISOTOP
• Current Temperature: 25°C
• Fall Time Tf: 460 ns
• Full Power Rating Temperature: 25°C
• Max Current Ic Continuous a: 200 A
• Number of Transistors: 1
• Power Dissipation: 500 W
• Power Dissipation Pd: 500 W
• Pulsed Current Icm: 400 A
• Rise Time: 75 ns
• Termination Type: Through Hole
• Transistor Polarity: N
• Voltage Vces: 600 V

RoHS: Yes

Accessories:

• Nettlefolds - MB04040010007FA
• Torqueleader - 015600