Datasheet GA200SA60SPBF - International Rectifier IGBT, SOT-227 TUBE 10 — Datenblatt

Detaillierte Beschreibung

Manufacturer: International Rectifier

Description: IGBT, SOT-227 TUBE 10

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Docket:
PD- 50070A
/) 5)$5
INSULATED GATE BIPOLAR TRANSISTOR
Features
· Standard : Optimized for minimum saturation voltage and low operating frequencies up to 1kHz · Lowest conduction losses available · Fully isolated package ( 2,500 volt AC) · Very low internal inductance ( 5 nH typ.) · Industry standard outline

Specifications:

• Transistor Type: IGBT
• Max Voltage Vce Sat: 1.1 V
• Collector-to-Emitter Breakdown Voltage: 600 V
• Transistor Case Style: ISOTOP
• Case Style: ISOTOP
• Current Temperature: 25°C
• Fall Time Tf: 660 ns
• Full Power Rating Temperature: 25°C
• Max Current Ic Continuous a: 200 A
• Number of Transistors: 1
• Power Dissipation: 630 W
• Power Dissipation Pd: 630 W
• Pulsed Current Icm: 400 A
• Rise Time: 60 ns
• Termination Type: Through Hole
• Transistor Polarity: N
• Voltage Vces: 600 V

RoHS: Yes

Accessories:

• Nettlefolds - MB04040010007FA
• Torqueleader - 015600