Datasheet ON Semiconductor BC638 — Datenblatt

DATA SHEET
www.onsemi.com PNP Epitaxial Silicon
Transistor
BC638 TO−92−3
CASE 135AR
1 Features • Switching and Amplifier Applications
• Complement to BC637
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Bent Lead
2 3 1. Emitter
2. Collector
3. Base Compliant
MARKING DIAGRAM ABSOLUTE MAXIMUM RATINGS
(Values are at TA = 25°C unless otherwise noted)
Parameter Symbol Value Unit Collector−Emitter Voltage at
RBE = 1 kW VCER −60 V Collector−Emitter Voltage VCES −60 V Collector−Emitter Voltage VCEO −60 V Emitter−Base Voltage VEBO −5 V Collector Current IC −1 A Peak Collector Current ICP −1.5 A Base Current IB −100 mA Junction Temperature TJ 150 °C Storage Temperature TSTG −65 to 150 °C Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected. ABC
638
YWW A
= Assembly Code
BC638 = Device Code
YWW = Date Code ORDERING INFORMATION
See detailed ordering and shipping information on page 2 of …