Datasheet IXYS IXRFD630 — Datenblatt

IXRFD630 30 A Low-Side RF MOSFET Driver
Features Description • High Peak Output Current
• Low Output Impedance
• Low Quiescent Supply Current
• Low Propagation Delay
• High Capacitive Load Drive Capability
• Wide Operating Voltage Range The IXRFD630 is a CMOS highspeed, high-current gate driver
specifically designed to drive
MOSFETs in Class D and E HF
RF applications as well as other
applications requiring ultrafast
rise and fall times or short minimum pulse widths. The IXRFD630 can source and
sink 30 A of peak current while producing voltage rise
and fall times of less than 4 ns and minimum pulse
widths of 8 ns. The input of the driver is compatible
with TTL or CMOS and is fully immune to latch up over
the entire operating range. Designed with small internal delays, cross conduction or current shoot-through
is virtually eliminated. The features and wide safety
margin in operating voltage and power make the
IXRFD630 unmatched in performance and value. Applications
• RF MOSFET Driver
• Class D and E RF Generators
• Multi-MHz Switch Mode Supplies …