Datasheet Diodes ZTX788B — Datenblatt

PNP SILICON PLANAR MEDIUM POWER
HIGH GAIN TRANSISTOR ZTX788B
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C)
PARAMETER SYMBOL MIN. Transition Frequency fT 100 Input Capacitance Cibo Output Capacitance
Switching Times TYP. MAX. UNIT CONDITIONS. MHz IC=-50mA, VCE=-5V
f=50MHz 225 pF VEB=-0.5V, f=1MHz Cobo 25 pF VCB=-10V, f=1MHz ton
toff 35
400 ns
ns IC=-500mA, IB1=-50mA
IB2=-50mA, VCC=-10V *Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤2% THERMAL CHARACTERISTICS
PARAMETER SYMBOL
Rth(j-amb)1
Rth(j-amb)2†
Rth(j-case) Thermal Resistance: Junction to Ambient1
Junction to Ambient2
Junction to Case MAX. UNIT 175
116
70 °C/W
°C/W
°C/W † Device mounted on P.C.B. with copper equal to 1 sq. Inch minimum. ZTX788B ISSUE 2 – APRIL 94
FEATURES
* 15 Volt VCEO
* Gain of 300 at IC=2 Amps …