Datasheet ON Semiconductor MJE210 — Datenblatt

MJE210 MJE210
Feature
• Low Collector-Emitter Saturation Voltage
• High Current Gain Bandwidth Product : fT=65MHz@IC= -100mA (Min.)
• Complement to MJE200 TO-126 1 1. Emitter 2.Collector 3.Base PNP Epitaxial Silicon Transistor
Absolute Maximum Ratings TC=25°C unless otherwise noted
Symbol
VCBO Parameter
Collector-Base Voltage Value
-40 Units
V -25 V VCEO Collector-Emitter Voltage VEBO Emitter-Base Voltage -8 V IC Collector Current -5 A PC Collector Dissipation (TC=25°C) 15 W TJ Junction Temperature 150 °C TSTG Storage Temperature -65 ~ 150 °C Electrical Characteristics TC=25°C unless otherwise noted
Symbol
BVCEO Parameter
Collector-Emitter Breakdown Voltage Test Condition
IC = -10mA, IB = 0 ICBO Collector Cut-off Current VCB = -40V, IE = 0
VCB = -40V, IE =0 @ TJ = 125°C IEBO Emitter Cut-off Current VBE = -8V, IC = 0 hFE1
hFE2
hFE3 DC Current Gain VCE = -1V, IC = -500mA
VCE = -1V, IC = -2A
VCE = -2V, IC = -5A VCE(sat) Collector-Emitter Saturation Voltage Min.
-25 70
45
10 Max. Units …