Datasheet ON Semiconductor MBRS330PT3G — Datenblatt

MBRS320P, MBRS330P,
MBRS340P
Surface Mount
Schottky Power Rectifier
These devices employ the Schottky Barrier principle in a large area
metal-to-silicon power diode. State-of-the-art geometry features
epitaxial construction with oxide passivation and metal overlay
contact. Ideally suited for low voltage, high frequency rectification, or
as free wheeling and polarity protection diodes, in surface mount
applications where compact size and weight are critical to the system.
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• Small Compact Surface Mountable Package with J-Bend Leads
Rectangular Package for Automated Handling
Highly Stable Oxide Passivated Junction
Very Low Forward Voltage Drop
(0.5 V Max @ 3.0 A, TJ = 25°C)
Excellent Ability to Withstand Reverse Avalanche Energy Transients …