Datasheet Intersil RFD10P03LSM — Datenblatt

RFD10P03L, RFD10P03LSM, RFP10P03L
Data Sheet July 1999 10A, 30V, 0.200 Ohm, Logic Level,
P-Channel Power MOSFET 3515.2 Features
• 10A, 30V These products are P-Channel power MOSFETs
manufactured using the MegaFET process. This process,
which uses feature sizes approaching those of LSI circuits,
gives optimum utilization of silicon, resulting in outstanding
performance. They were designed for use in applications
such as switching regulators, switching converters, motor
drivers, and relay drivers. These transistors can be operated
directly from integrated circuits.
Formerly developmental type TA49205. • rDS(ON) = 0.200Ω
• Temperature Compensating PSPICE® Model
• PSPICE Thermal Model
• Peak Current vs Pulse Width Curve
• UIS Rating Curve
• 175oC Operating Temperature Symbol Ordering Information
PART NUMBER File Number D PACKAGE BRAND RFD10P03L TO-251AA 10P03L RFD10P03LSM TO-252AA 10P03L RFP10P03L TO-220AB F10P03L G S NOTE: When ordering, use the entire part number. Add the suffix, 9A,
to obtain the TO-252AA variant in tape and reel, i.e. RFD10P03LSM9A. Packaging
JEDEC TO-251AA JEDEC TO-252AA DRAIN (FLANGE) SOURCE
DRAIN
GATE DRAIN (FLANGE) GATE
SOURCE JEDEC TO-220AB …