Datasheet Analog Devices ADG636 — Datenblatt
| Hersteller | Analog Devices |
| Serie | ADG636 |
1 pC Ladungsinjektion, 100 pA Leckstrom, CMOS, ±5 V/+5 V/+3 V Dual-SPDT-Schalter
Datenblätter
Datasheet ADG636
PDF, 505 Kb, Sprache: en, Revision: B, Datei hochgeladen: Apr 24, 2022, Seiten: 16
1 pC Charge Injection, 100 pA Leakage, CMOS, ±5 V/+5 V/+3 V Dual SPDT Switch
1 pC Charge Injection, 100 pA Leakage, CMOS, ±5 V/+5 V/+3 V Dual SPDT Switch
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Preise
Status
| ADG636YRUZ | ADG636YRUZ-REEL | ADG636YRUZ-REEL7 | |
|---|---|---|---|
| Lifecycle Status | Production (Appropriate for new designs but newer alternatives may exist) | Production (Appropriate for new designs but newer alternatives may exist) | Production (Appropriate for new designs but newer alternatives may exist) |
Verpackung
| ADG636YRUZ | ADG636YRUZ-REEL | ADG636YRUZ-REEL7 | |
|---|---|---|---|
| N | 1 | 2 | 3 |
| Package | 14-Lead TSSOP | 14-Lead TSSOP | 14-Lead TSSOP |
| Pins | 14 | 14 | 14 |
| Package Code | RU-14 | RU-14 | RU-14 |
Parameter
| Parameters / Models | ADG636YRUZ | ADG636YRUZ-REEL | ADG636YRUZ-REEL7 |
|---|---|---|---|
| BW -3 dB typ, Hz | 610M | 610M | 610M |
| Charge Injection, C | -1.2p | -1.2p | -1.2p |
| Device Config | (2:1) x 2 | (2:1) x 2 | (2:1) x 2 |
| Interface | Parallel | Parallel | Parallel |
| Leakage Switch ON typ, A | 10p | 10p | 10p |
| Operating Temperature Range, °C | -40 to 125 | -40 to 125 | -40 to 125 |
| Package | 14-Lead TSSOP | 14-Lead TSSOP | 14-Lead TSSOP |
| Switch Ron typ, Ohms | 85 | 85 | 85 |
| Vs Span Dual max, V | 11 | 11 | 11 |
| Vs Span Dual min, V | 5.4 | 5.4 | 5.4 |
Öko-Plan
| ADG636YRUZ | ADG636YRUZ-REEL | ADG636YRUZ-REEL7 | |
|---|---|---|---|
| RoHS | Compliant | Compliant | Compliant |
Modellreihe
Serie: ADG636 (3)
Herstellerklassifikation
- Switches and Multiplexers > Dual-Supply Analog Switches and Multiplexers | Single-Supply Analog Switches and Multiplexers