Datasheet Analog Devices ADG636YRUZ — Datenblatt
| Hersteller | Analog Devices |
| Serie | ADG636 |
| Artikelnummer | ADG636YRUZ |
1 pC Ladungsinjektion, 100 pA Leckstrom, CMOS, ±5 V/+5 V/+3 V Dual-SPDT-Schalter
Datenblätter
Datasheet ADG636
PDF, 505 Kb, Sprache: en, Revision: B, Datei hochgeladen: Apr 24, 2022, Seiten: 16
1 pC Charge Injection, 100 pA Leakage, CMOS, ±5 V/+5 V/+3 V Dual SPDT Switch
1 pC Charge Injection, 100 pA Leakage, CMOS, ±5 V/+5 V/+3 V Dual SPDT Switch
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Preise
Status
| Lifecycle Status | Production (Appropriate for new designs but newer alternatives may exist) |
Verpackung
| Package | 14-Lead TSSOP |
| Pins | 14 |
| Package Code | RU-14 |
Parameter
| BW -3 dB typ | 610M Hz |
| Charge Injection | -1.2p C |
| Device Config | (2:1) x 2 |
| Interface | Parallel |
| Leakage Switch ON typ | 10p A |
| Operating Temperature Range | -40 to 125 °C |
| Package | 14-Lead TSSOP |
| Switch Ron typ | 85 Ohms |
| Vs Span Dual max | 11 V |
| Vs Span Dual min | 5.4 V |
Öko-Plan
| RoHS | Compliant |
Modellreihe
Serie: ADG636 (3)
- ADG636YRUZ ADG636YRUZ-REEL ADG636YRUZ-REEL7
Herstellerklassifikation
- Switches and Multiplexers > Dual-Supply Analog Switches and Multiplexers | Single-Supply Analog Switches and Multiplexers