PDF, 482 Kb, Sprache: en, Datei hochgeladen: Aug 18, 2021, Seiten: 5
30V N-Channel MOSFET
Auszug aus dem Dokument
AO3400A
30V N-Channel MOSFET General Description Product Summary The AO3400A combines advanced trench MOSFET
technology with a low resistance package to provide
extremely low RDS(ON). This device is suitable for use as a
load switch or in PWM applications. ID (at VGS=10V) VDS 30V
5.7A RDS(ON) (at VGS=10V) < 26.5mΩ RDS(ON) (at VGS = 4.5V) < 32mΩ RDS(ON) (at VGS = 2.5V) < 48mΩ SOT23
Top View D Bottom View D D G S G
S S G Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage VGS
TA=25°C Continuous Drain
Current
Pulsed Drain Current C Power Dissipation B Junction and Storage Temperature Range
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A D
Maximum Junction-to-Lead Rev 3: Dec 2011 Steady-State
Steady-State A 30
W 0.9 TJ, TSTG Symbol …