Datasheet ON Semiconductor 2N6059 — Datenblatt

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PNP 2N6052* Darlington Complementary
Silicon Power Transistors NPN . designed for general−purpose amplifier and low frequency
switching applications. 2N6058
2N6059* • High DC Current Gain —
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w hFE = 3500 (Typ) @ IC = 5.0 Adc
Collector−Emitter Sustaining Voltage — @ 100 mA
VCEO(sus) = 80 Vdc (Min) — 2N6058
100 Vdc (Min) — 2N6052, 2N6059
Monolithic Construction with Built−In Base−Emitter Shunt Resistors *ON Semiconductor Preferred Device DARLINGTON
12 AMPERE
COMPLEMENTARY
SILICON
POWER TRANSISTORS
80 −100 VOLTS
150 WATTS These devices are available in Pb−free package(s). Specifications herein
apply to both standard and Pb−free devices. Please see our website at
www.onsemi.com for specific Pb−free orderable part numbers, or
contact your local ON Semiconductor sales office or representative. ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
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