Datasheet Wolfspeed C2M0080170P — Datenblatt

C2M0080170P VDS ID @ 25˚C Silicon Carbide Power MOSFET
TM
C2M MOSFET Technology RDS(on) 1700 V
40 A 80 mΩ N-Channel Enhancement Mode Features • • • • • • Package Optimized package with separate driver source pin
8mm of creepage distance between drain and source
High blocking voltage with low On-resistance
High speed switching with low capacitances
Easy to parallel and simple to drive
Halogen Free, RoHS compliant TAB
Drain Benefits • • • • • Drain
(Pin 1, TAB) Reduce switching losses and minimize gate ringing
Higher system efficiency
Reduced cooling requirements
Increased power density
Increased system switching frequency 1
D 2 3 4
S S G Gate
(Pin 4) Applications • • • • Driver
Source
(Pin 3) 1500V Solar Inverters
Switch Mode Power Supplies High voltage DC/DC Converters
Capacitor discharge Power
Source …