Datasheet Analog Devices HMC413QS16GE — Datenblatt

HMC413QS16G / 413QS16GE
v04.0505 11 GaAs InGaP HBT MMIC
POWER AMPLIFIER, 1.6 -2.2 GHz Typical Applications Features This amplifier is ideal for use as a power/driver
amplifier for 1.6 -2.2 GHz applications: Gain: 23 dB • Cellular / PCS / 3G 42% PAE • Portable & Infrastructure Supply Voltage: +2.75V to +5V • Wireless Local Loop Power Down Capability Saturated Power: +29.5 dBm Low External Part Count LINEAR & POWER AMPLIFIERS -SMT Included in the HMC-DK002 Designer’s Kit Functional Diagram The HMC413QS16G & HMC413QS16GE are high
efficiency GaAs InGaP Heterojunction Bipolar Transistor (HBT) MMIC Power amplifiers which operate
between 1.6 and 2.2 GHz. The amplifier is packaged
in a low cost, surface mount 16 leaded package with
an exposed base for improved RF and thermal performance. With a minimum of external components, the
amplifier provides 23 dB of gain, +29.5 dBm of saturated power at 42% PAE from a +5V supply voltage.
The amplifier can also operate with a 3.6V supply. Vpd
can be used for full power down or RF output power/
current control. Electrical Specifi cations, TA = +25° C, As a Function of Vs, Vpd = 3.6V
Vs= 3.6V
Parameter Vs= 5V Frequency
1.6 -1.7 GHz
1.7 -2.0 GHz
2.0 -2.1 GHz
2.1 -2.2 GHz Gain Units
Min. Typ. 18
19
18
17 21
22 …