Datasheet Analog Devices HMC408LP3ETR — Datenblatt

HMC408LP3 / 408LP3E
v03.0705 LINEAR & POWER AMPLIFIERS -SMT 11 GaAs InGaP HBT MMIC 1 WATT
POWER AMPLIFIER, 5.1 -5.9 GHz Typical Applications Features The HMC408LP3 / HMC408LP3E is ideal for: Gain: 20 dB • 802.11a & HiperLAN WLAN Saturated Power: +32.5 dBm @ 27% PAE • UNII & Point-to-Point / Multi-Point Radios Single Supply Voltage: +5V • Access Point Radios Power Down Capability
3x3 mm Leadless SMT Package Functional Diagram General Description
The HMC408LP3 & HMC408LP3E are 5.1 -5.9 GHz
high efficiency GaAs InGaP Heterojunction Bipolar
Transistor (HBT) Power Amplifier MMICs which offer
+30 dBm P1dB. The amplifier provides 20 dB of gain,
+32.5 dBm of saturated power, and 27% PAE from a
+5V supply voltage. The input is internally matched
to 50 Ohms while the output requires a minimum of
external components. Vpd can be used for full power
down or RF output power/current control. The amplifier
is packaged in a low cost, 3x3 mm leadless surface
mount package with an exposed base for improved
RF and thermal performance. Electrical Specifi cations, TA = +25° C, Vs = 5V, Vpd = 5V
Parameter Min. Frequency Range Typ. Max. Min. 5.7 -5.9 Gain 17 Gain Variation Over Temperature 20
0.045 17
0.055 Typ. Max. Units 5.1 -5.9 GHz 20 dB 0.045 0.055 dB/°C Input Return Loss 8 8 dB Output Return Loss* 14 6 dB 24 27
23 dBm 31 dBm 36 39 dBm -50
-90 dBc
dBc Output Power for 1 dB Compression
(P1dB) Icq= 750 mA …