Datasheet Analog Devices HMC457QS16GE — Datenblatt

HMC457QS16G / 457QS16GE
v03.0907 InGaP HBT 1 WATT POWER
AMPLIFIER, 1.7 -2.2 GHz Typical Applications Features The HMC457QS16G / HMC457QS16GE is ideal for
applications requiring a high dynamic range amplifier: Output IP3: +46 dBm • CDMA & W-CDMA 48% PAE @ +32 dBm Pout • GSM, GPRS & Edge +25 dBm W-CDMA Channel Power
@ -50 dBc ACPR Gain: 27 dB @ 1900 MHz • Base Stations & Repeaters LINEAR & POWER AMPLIFIERS -SMT 11 Integrated Power Control (Vpd)
QSOP16G SMT Package: 29.4 mm2
Included in the HMC-DK002 Designer’s Kit Functional Diagram General Description
The HMC457QS16G & HMC457QS16GE are high
dynamic range GaAs InGaP Heterojunction Bipolar
Transistor (HBT) 1 watt MMIC power amplifiers
operating between 1.7 and 2.2 GHz. Packaged in a
miniature 16 lead QSOP plastic package, the amplifier
gain is typically 27 dB from 1.7 to 2.0 GHz and 25 dB
from 2.0 to 2.2 GHz. Utilizing a minimum number of
external components, the amplifier output IP3 can
be optimized to +45 dBm. The power control (Vpd)
can be used for full power down or RF output power/
current control. The high output IP3 and PAE make
the HMC457QS16G & HMC457QS16GE ideal power
amplifiers for Cellular/3G base station & repeater
applications. Electrical Specifi cations, TA = +25°C, Vs= +5V, Vpd = +5V, Vbias = +5V [1]
Parameter Min. Frequency Range
Gain Typ. Max. Min. 1710 -1990 …