Datasheet Analog Devices HMC1087-Die — Datenblatt

HMC1087
v05.1217 AMPLIFIERS -LINEAR & POWER -CHIP 8 WATT GaN MMIC POWER AMPLIFIER,
2 -20 GHz
Typical Applications Features The HMC1087 is ideal for: High Psat: +39 dBm • Test Instrumentation Power Gain at Psat: +5.5 dB • General Communications High Output IP3: +44 dBm • Radar Small Signal Gain: 11 dB
Supply Voltage: +28 V @ 850 mA
50 Ohm Matched Input/Output
Die Size: 2 x 4 x 0.1 mm Functional Diagram General Description
The HMC1087 is an 8W Gallium Nitride (GaN) MMIC
Power Amplifier which operates between 2 and 20
GHz. The amplifier typically provides 11dB of small
signal gain, +39 dBm of saturated output power, and
+44 dBm output IP3 at +29 dBm output power per tone.
The HMC1087 draws 850 mA quiescent current from
a +28V DC supply. The RF I/Os are matched to 50
Ohms for ease of integration into Multi-Chip-Modules
(MCMs). All electrical performance data was acquired
with the die eutectically attached to 1.02 mm (40 mil)
thick CuMo carrier with multiple 1.0 mil diameter ball
bonds connecting the die to 50 Ohm transmission
lines on alumina. Electrical Specifications, Tc = +25°C, Vdd = +28 V, Idd = 850 mA [1]
Parameter Min. Frequency Range Typ. Max. Min. 2-6 Small Signal Gain 10 11 Typ. Max. Min. 6 -18
10 12 10 Typ. Max. Units 18 -20 GHz 12 dB Gain Flatness ±0.5 ±1.0 ±0.5 dB Gain Variation Over Temperature 0.012 0.016 0.024 dB/ °C 8 8 15 dB Input Return Loss
Output Return Loss 10 12 12 dB Output Power for 3 dB Compression (P3dB) 38 38 38 dBm Power Gain for 3 dB compression (P3dB) 8.5 8.5 8 dB Saturated Output Power (Psat) 39 40 39 dBm 44 44 43.5 dBm Output Third Order Intercept (IP3) [2] Power Added Efficiency …