Datasheet Analog Devices HMC7357LP5GETR — Datenblatt

HMC7357LP5GE
v01.0918 Typical Applications Features The HMC7357LP5GE is ideal for: +35 dBm Pout @ 34% PAE • Point-to-Point Radios High P1dB Output Power: +34 dBm • Point-to-Multi-Point Radios High Output IP3: +41.5 dBm • VSAT & SATCOM High Gain: 29 dB
50 Ohm Matched Input/Output
Supply Voltage: Vdd = +8V @ 1200 mA
24-Lead 5x5 mm SMT Package Functional Diagram N/C 1 18 N/C GND 2 17 N/C RFIN 3 16 RFOUT N/C 4 15 GND 1.5KΩ 1.5KΩ 14 N/C
13 N/C
N/C 12 Vdd4 11 Vdd3 10 8
Vgg2 N/C 9 7 N/C 6 PACKAGE
BASE GND 00000-000 N/C 5 The HMC7357LP5GE is a three-stage GaAs pHEMT
MMIC Medium Power Amplifier that operates between
5.5 and 8.5 GHz. The amplifier provides 29 dB of gain
and +35 dBm of saturated output power at 34% PAE
from a +8V supply. With an excellent Output IP3 of
+41.5 dBm, the HMC7357LP5GE is ideal for linear
applications such as high capacity point-to-point
and point-to-multi-point radios or VSAT/SATCOM
applications demanding +35 dBm of efficient saturated
output power. The RF I/Os are internally matched
to 50 Ohms for ease of use. The HMC7357LP5GE
is packaged in a leadless 5x5 mm plastic surface
mount package and is compatible with surface mount
manufacturing techniques. 19 N/C 20 Vdd2 21 Vdd1 22 N/C 23 Vgg1 24 N/C General Description N/C AMPLIFIERS -LINEAR & POWER -SMT GaAs pHEMT MMIC 2 WATT
POWER AMPLIFIER, 5.5 -8.5 GHz Electrical Specifications, TA = +25° C Vdd = Vdd1 = Vdd2 = Vdd3 = Vdd4 = 8V, Idd = 1200 mA [1] …