Datasheet Analog Devices HMC8415LP6GETR — Datenblatt

40 W (46 dBm), 9 GHz to 10.5 GHz,
GaN Power Amplifier
HMC8415LP6GE Data Sheet VDD3A VDD3A VDD1A
VDD2A VGG2A VGG3A FUNCTIONAL BLOCK DIAGRAM High output power: 46 dBm typical at PIN = 23 dBm
High small signal gain: 32.5 dB typical
High power gain: 23 dB typical at PIN = 23 dBm
Frequency range: 9 GHz to 10.5 GHz
High power added efficiency: 40% typical at PIN = 23 dBm
Supply voltage: VDDxA/VDDxB = 28 V at 1000 mA
6 mm × 6 mm, 40-lead LFSCP VGG1A FEATURES HMC8415LP6GE GND GND RFIN RFOUT GND GND PACKAGE
BASE
GND 16688-001 VDD3B VDD3B VDD1B
VDD2B VGG3B VGG1B Weather radars
Marine radars
Military radars VGG2B APPLICATIONS Figure 1. GENERAL DESCRIPTION
The HMC8415LP6GE is a gallium nitride (GaN), power amplifier,
delivering 40 W (46 dBm) with more than 37.5% power added
efficiency (PAE) across a bandwidth of 9 GHz to 10.5 GHz. Rev. A The HMC8415LP6GE is ideal for pulsed applications, such as
wireless weather, marine, and military radar applications. Document Feedback Information furnished by Analog Devices is believed to be accurate and reliable. However, no
responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other
rights of third parties that may result from its use. Specifications subject to change without notice. No
license is granted by implication or otherwise under any patent or patent rights of Analog Devices.
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