Datasheet Analog Devices ADMV7710CHIPS — Datenblatt

71 GHz to 76 GHz, 1 W E-Band
Power Amplifier with Power Detector
ADMV7710 Data Sheet
FEATURES GENERAL DESCRIPTION Gain: 24 dB typical
Output power for 1 dB compression: 28 dBm typical
Saturated output power: 29 dBm typical
Output third-order intercept: 34 dBm typical
Input return loss: 18 dB typical
Output return loss: 10 dB typical
DC supply: 4 V at 800 mA
No external matching required
Die size: 2.999 mm × 3.999 mm × 0.05 mm The ADMV7710 is an integrated, E-band, gallium arsenide
(GaAs), pseudomorphic, high electron mobility tranfer (pHEMT),
mono-lithic microwave integrated circuit (MMIC), medium
power amplifier with an on-chip, temperature compensated
power detector that operates from 71 GHz to 76 GHz. The
ADMV7710 provides 24 dB of gain, 28 dBm of output power at
1 dB compression, and 29 dBm of saturated output power at 20%
power added efficiency from a 4 V power supply. The ADMV7710
exhibits excellent linearity and is optimized for E-band communications and high capacity, wireless backhaul radio systems. The
amplifier configuration and high gain make the device an excellent
candidate for last stage signal amplification before the antenna.
All data is taken with the chip in a 50 Ω test fixture connected via …