Datasheet Analog Devices HMC-ALH216 — Datenblatt

HMC-ALH216
v03.0209 LOW NOISE AMPLIFIERS -CHIP 1 GaAs HEMT MMIC LOW NOISE
AMPLIFIER, 14 -27 GHz Typical Applications Features This HMC-ALH216 is ideal for: Noise Figure: 2.5 dB @ 20 GHz • Point-to-Point Radios Gain: 18 dB • Point-to-Multi-Point Radios P1dB Output Power: +14 dBm • Military & Space Supply Voltage: +4V @ 90 mA • Test Instrumentation Die Size: 2.25 x 1.58 x 0.1 mm Functional Diagram General Description
The HMC-ALH216 is a GaAs MMIC HEMT Wideband
Low Noise Amplifier die which operates between 14
and 27 GHz. The amplifier provides 18 dB of gain,
2.5 dB noise figure and +14 dBm of output power at
1 dB gain compression while requiring only 90 mA
from a +4V supply voltage. The HMC-ALH216 amplifier
is ideal for integration into Multi-Chip-Modules
(MCMs) due to its small size. Electrical Specifi cations*, TA = +25° C, Vdd= +4V
Parameter Min. Frequency Range
Gain Typ. Max. 14 -27
14 Units
GHz 18 dB Gain Variation over Temperature 0.02 dB / °C Noise Figure 2.7 Input Return Loss 15 Output Return Loss 15 dB Supply Current (Idd) (Vdd = 4V, Vgg = -0.5 Typ.) 90 mA 4.5 dB
dB *Unless otherwise indicated, all measurements are from probed die 1 -126 For price,
delivery,
and to placeCorporation:
orders: Analog Devices, Inc.,
For price, delivery, and to place orders, please contact
Hittite
Microwave
One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106 …