Datasheet Analog Devices HMC326MS8GETR — Datenblatt

HMC326MS8G / 326MS8GE
v11.1019 AMPLIFIERS -DRIVER & GAIN BLOCK -SMT GaAs InGaP HBT MMIC DRIVER
AMPLIFIER, 3.0 -4.5 GHz
Typical Applications Features The HMC326MS8G / HMC326MS8GE is ideal for: Psat Output Power: +26 dBm • Microwave Radios > 40% PAE • Broadband Radio Systems Output IP3: +36 dBm • Wireless Local Loop Driver Amplifier High Gain: 21 dB
Vs: +5V
Ultra Small Package: MSOP8G Functional Diagram General Description
The HMC326MS8G & HMC326MS8GE are high
efficiency GaAs InGaP Heterojunction Bipolar
Transistor (HBT) MMIC driver amplifiers which
operate between 3.0 and 4.5 GHz. The amplifier
is packaged in a low cost, surface mount 8 leaded
package with an exposed base for improved RF and
thermal performance. The amplifier provides 21 dB
of gain and +26 dBm of saturated power from a +5V
supply voltage. Power down capability is available to
conserve current consumption when the amplifier is
not in use. Internal circuit matching was optimized to
provide greater than 40% PAE. Electrical Specifications, TA = +25° C, Vs = 5V, Vpd = 5V
Parameter Min. Frequency Range
Gain 18 Gain Variation Over Temperature Max. Units
GHz 21
0.025 dB
0.035 dB / °C Input Return Loss 12 dB Output Return Loss 7 dB 23.5 dBm 26 dBm 36 dBm 5 dB Output Power for 1dB Compression (P1dB) 21 Saturated Output Power (Psat) …