Datasheet Analog Devices HMC-AUH317 — Datenblatt

HMC-AUH317
v04.0511 Amplifiers -Linear & Power -Chip 3 GaAs HEMT MMIC MEDIUM POWER
AMPLIFIER, 81 -86 GHz Typical Applications Features This HMC-AUH317 is ideal for: Gain: 22 dB • Short Haul / High Capacity Links P1dB: +17.5 dBm • Wireless LAN Bridges Supply Voltage: +4V • Military & Space 50 Ohm Matched Input/Output • E-Band Communication Systems Die Size: 2.65 x 1.6 x 0.05 mm Functional Diagram General Description
The HMC-AUH317 is a high dynamic range, three
stage GaAs HEMT MMIC Medium Power Amplifier
which operates between 81 and 86 GHz. The HMCAUH317 provides 22 dB of gain, and an output power
of +17.5 dBm at 1 dB compression from a +4V supply
voltage. All bond pads and the die backside are Ti/Au
metallized and the amplifier device is fully passivated
for reliable operation. The HMC-AUH317 GaAs
HEMT MMIC Medium Power Amplifier is compatible
with conventional die attach methods, as well as
thermocompression and thermosonic wire bonding,
making it ideal for MCM and hybrid microcircuit
applications. All data shown herein is measured with
the chip in a 50 Ohm environment and contacted with
RF probes. Electrical Specifications, TA = +25° C, Vdd1=Vdd2 = 4V, Idd1 = Idd2 = 80 mA [2]
Parameter Min. Frequency Range
Gain 19 Typ. Max. Units 81 -86 GHz 22 dB Input Return Loss 9 dB Output Return Loss 5 dB Output power for 1dB Compression (P1dB) 17.5 dBm Saturated Output Power (Psat) 19.5 dBm Supply Current (Idd1+Idd2) 160 mA [1] Unless otherwise indicated, all measurements are from probed die.
[2] Adjust Vgg1, Vgg2 independently between -0.8V to +0.3V (typically -0.1V) to achieve drain currents of Idd1 = 80 mA and Idd2 = 80 mA. Products and product information are subject to change without notice. 3-1 Information furnished by Analog Devices is believed to be accurate and reliable. However, no
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