Datasheet ON Semiconductor MTP2P50E — Datenblatt

MTP2P50EG
Power MOSFET 2 Amps, 500 Volts, P−Channel TO−220
This high voltage MOSFET uses an advanced termination scheme
to provide enhanced voltage−blocking capability without degrading
performance over time. In addition, this Power MOSFET is designed
to withstand high energy in the avalanche and commutation modes.
The energy efficient design also offers a drain−to−source diode with a
fast recovery time. Designed for high voltage, high speed switching
applications in power supplies, converters and PWM motor controls,
these devices are particularly well suited for bridge circuits where
diode speed and commutating safe operating areas are critical and
offer additional safety margin against unexpected voltage transients. www.onsemi.com 2 AMPERES, 500 VOLTS
RDS(on) = 6 W
P−Channel
D Features • Robust High Voltage Termination
• Avalanche Energy Specified
• Source−to−Drain Diode Recovery Time Comparable to a Discrete G Fast Recovery Diode • Diode is Characterized for Use in Bridge Circuits
• IDSS and VDS(on) Specified at Elevated Temperature
• This is a Pb−Free Device* S MARKING DIAGRAM
AND PIN ASSIGNMENT MAXIMUM RATINGS (TC = 25°C unless otherwise noted)
Rating Symbol Value Unit Drain−Source Voltage VDSS 500 Vdc Drain−Gate Voltage (RGS = 1.0 MW) VDGR 500 Vdc Gate−Source Voltage
− Continuous
− Non−Repetitive (tp ≤ 10 ms) VGS …